Name: Mihail Petkov

Biography: Received his B.S. (1987) and M.S. in Physics and Engineering Physics (1989) from the University of Sofia, Bulgaria, and Ph.D. in Physics from Washington State University (1998). He did his graduate work in positron annihilation spectroscopy at Brookhaven NL and WSU. He joined the Jet Propulsion Laboratory in 2001 and is a Senior Member of the Failure Analysis Group of the Electronic Parts Engineering Office. He has published 30 refereed papers on electronic and vacancy-like defects in semiconductor materials, layered structures, and interfaces of electronic devices. He and other collaborators from IBM and WSU pioneered the development of positron annihilation spectroscopy as a characterization tool for porous low-k dielectrics, which yields critical microstructural information for the low-k integration in device fabrication. He has a broad range of interests in novel semiconductor materials and technologies, with emphasis on low-k (interlevel) and high-k (capacitor and gate) dielectrics in integrated circuits, Si nanocrystal non-volatile memory technology, SOI, Si-Ge, the effects of extreme thermal and radiation space environments on materials and devices.