e0 | vacuum permittivity |
er | relative dielectric constant |
h | efficiency |
l | wavelength |
m | mobility |
v | electron drift velocity |
vsat | saturated electron velocity |
t | time or lifetime |
fb | barrier potential |
fm | metal work function |
c | electron affinity |
2DEG | two-dimensional electron gas |
A | emitterbase junction or diode area; proportional multiplier |
a | physical channel depth |
ADC | analog-to-digital converter |
Al | aluminum |
As | arsenic |
Au | gold |
Be | beryllium |
BER | bit error rate |
BJT | bipolar junction transistor |
b(x) | effective FET channel depth |
C | carbon |
CAD | computer aided design |
CAE | computer aided engineering |
CCS | collector-substrate capacitance |
CDC | drain-channel capacitance |
CF | total forward biased junction capacitance |
Cj | junction capacitance; depletion region capacitance |
CMOS | complimentary metal oxide semiconductor (transistor) |
Cr | chromium |
CTE | coefficient of thermal expansion |
Cv | capacitance of insulating region |
dB | decibels (dB = 10 log[power]) |
DBS | direct broadcast satellite |
Dn | electron diffusivity |
DNP | distance neutral point |
Dp | hole diffusivity |
Ea | activation energy |
E-B | emitterbase |
Ec | conduction band energy |
EDM | empirical device model |
Ef | Fermi energy |
Eg | bandgap energy |
Em | breakdown electric field |
EOS | electrical overstress |
ESD | electrostatic discharge |
Ev | valance band energy |
eV | electron volt |
fc | forward current cutoff frequency |
fcc | face centered cubic |
FEM | finite element method |
FET | field effect transistor |
FIT | failure in time (1 failure/1 ´ 109 device h) |
fmax | maximum frequency of oscillation |
ft | cutoff frequency or frequency where unilateral power gain equals one |
f(t) | failure rate |
g | gram |
GaAs | gallium arsenide |
GCR | galactic cosmic rays |
Ge | germanium |
GEO | geostationary orbit |
gm | transconductance |
GPS | Global Positioning System |
h | hour |
HBT | heterojunction bipolar transistor |
HDI | high density interconnect |
HEMT | high-electron mobility transistor |
hfe | current gain |
I | current |
ID | drain current |
IDSS | drain-source saturation current |
IF | intermediate frequency |
IMPATT | impact ionization avalanche transit time (diode) |
In | electron injection current |
In | Indium |
IR | infrared |
J | current density |
JFET | junction field effect transistor |
J0 | constant depending on doping concentration |
K | Kelvin |
k | Boltzman's constant |
Ka | frequency band (26.540 GHz) |
Ku | frequency band |
L | length |
LEC | Liquid Encapsulated Czochralski |
LEO | low Earth orbit |
LET | linear energy transfer |
LNA | low-noise amplifier |
LO | local oscillator |
LTCC | low-temperature cofired ceramic |
MBE | molecular beam epitaxy |
MESFET | metal-semiconductor field effect transistor |
MIC | microwave integrated circuit |
MIM | metal-insulator-metal (capacitor) |
MMIC | monolithic microwave integrated circuit |
MOCVD | metal-organic chemical vapor deposition |
MODFET | modulation doped field effect transistor |
MTBF | mean time between failure |
MTTF | mean time to failure |
n | ideality factor |
NA | acceptor impurity density |
NB | base doping concentration |
ND | donor impurity density |
Nd | donor doping concentration |
NE | emitter doping concentration |
NF | noise figure |
Ni | nickel |
NPN | n-typep-typen-type (transistor) |
n(x) | electron density |
P(s) | probability of success |
PBM | physically based model |
PCS | personal communication system |
Pd | palladium |
PHEMT | pseudomorphic high-electron mobility transistor |
PIN | p-typeinsulatorn-type (diode) |
PIND | particle impact noise detection |
PIX | polyimide die overcoat |
PM | parametric monitor |
PNP | p-typen-typep-type (transistor) |
Pout | output power |
Pt | platinum |
Q | quality factor |
q | charge of an electron |
Qc | critical charge |
QML | Qualified Manufacturers Listing |
r | rate of a process |
Rb | base resistance |
RD | drain resistance |
RDS | channel resistance between drain and source |
RF | radio frequency (typically refers to highest frequency in the circuit) |
RF | total forward biased series resistance |
RHA | radiation hardness assurance |
RIE | reactive ion etch |
Rj | junction resistance |
Rohm | ohmic contact resistance |
RS | source resistance |
R(t) | reliability-the probability of a component surviving to time t |
RTG | radioisotopic thermoelectric generator |
Rv | resistance of insulating region |
SAA | South Atlantic Anomaly |
SCR | silicon-controlled rectifier |
SEB | single event burnout |
SEC | standard evaluation circuit |
SEE | single event effect |
SEGR | single event gate rupture |
SEL | single event latchup |
SEM | scanning electron microscope |
SEU | single event upset |
Si | silicon |
SOI | silicon on insulator |
SOS | silicon on sapphire |
SPC | statistical process control |
T | absolute temperature in Kelvin |
t | time or carrier transit time |
TCV | technology characterization vehicle |
TEGFET | two-dimensional electron gas field effect transistor |
TID | total ionizing dose |
TRB | Technology Review Board |
V | voltage |
Va | early voltage |
VBE | baseemitter voltage |
Vbi | built-in voltage |
VCF | potential between conduction band and Fermi level |
VCO | voltage-controlled oscillators |
VD | drain bias voltage |
VDS | potential between drain and source |
VG | gate bias voltage |
VLSI | very large scale integration |
Vp | pinch-off voltage |
VT | thermal potential |
W | width |
W | frequency band (75110 GHz); tungsten |
WLAN | Wireless Local Area Network |
X | frequency band (812 GHz) |
Z | gate width; width of channel |